Al-Shakban, M, Matthews, PD ORCID: 0000-0002-1362-8003, Lewis, EA, Raftery, J, Vitorica-Yrezabal, I, Haigh, SJ, Lewis, DJ and O'Brien, P (2018) Chemical Vapor Deposition of Tin Sulfide from Diorganotin(IV) Dixanthates. Journal of Materials Science. ISSN 0022-2461

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Abstract

We report the synthesis and single-crystal X-ray characterization of diphenyltin bis(2-methoxyethylxanthate) and diphenyltin bis(iso-butylxanthate). These xanthates have been used as a single-source precursor to deposit tin chalcogenide thin films by aerosol-assisted chemical vapor deposition. Grazing incidence X-ray diffraction and scanning transmission electron microscope imaging coupled with elemental mapping show that films deposited from diphenyltin bis(iso-butylxanthate) contain orthorhombic SnS, while films deposited from diphenyltin bis(2-methoxyethylxanthate) between 400 and 575 °C form a SnS/SnO2 nanocomposite. In synthesizing the thin films, we have also demonstrated an ability to control the band gap of the materials based on composition and deposition temperature.

Item Type: Article
Additional Information: This is the final published version of the article (version of record). It first appeared online via Springer at https://doi.org/10.1007/s10853-018-2968-y - please refer to any applicable terms of use of the publisher.
Subjects: Q Science > QD Chemistry
Divisions: Faculty of Natural Sciences > School of Chemical and Physical Sciences
Depositing User: Symplectic
Date Deposited: 01 Oct 2018 12:49
Last Modified: 01 Oct 2018 12:56
URI: http://eprints.keele.ac.uk/id/eprint/5389

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