F Martelli
Laser writing of the electronic activity of N- and H-atoms in GaAs
Martelli, F; Rubini, S; Balakrishnan, N; Patanè, A; Makarovsky, O; Polimeni, A; Capizzi, M
Authors
S Rubini
Dr Nilanthy Balakrishnan n.balakrishnan@keele.ac.uk
A Patanè
O Makarovsky
A Polimeni
M Capizzi
Abstract
We use a focussed laser beam to control the electronic activity of N- and H-atoms in a dilute nitride Ga(AsN)/GaAs quantum well. Our approach yields submicron resolution in the spatial manipulation of the electronic properties and can provide an alternative method to masking techniques for H-defect engineering and in-plane patterning of the band gap energy. This work was supported by the Royal Society and by the University of Nottingham, and the COST Action MP0805.
Acceptance Date | Jun 1, 2011 |
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Publication Date | Jul 11, 2011 |
Publicly Available Date | Mar 29, 2024 |
Journal | Applied Physics Letters |
Print ISSN | 0003-6951 |
Publisher | AIP Publishing |
Pages | 021105 - 021105 |
DOI | https://doi.org/10.1063/1.3610464 |
Publisher URL | https://doi.org/10.1063/1.3610464 |
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