Balakrishnan, N, Patanè, A, Makarovsky, O, Polimeni, A, Capizzi, M, Martelli, F and Rubini, S (2011) Laser writing of the electronic activity of N- and H-atoms in GaAs. Applied Physics Letters, 99 (2). 021105 - 021105.

[img]
Preview
Text
Laser writing.pdf

Download (698kB) | Preview

Abstract

We use a focussed laser beam to control the electronic activity of N- and H-atoms in a dilute nitride Ga(AsN)/GaAs quantum well. Our approach yields submicron resolution in the spatial manipulation of the electronic properties and can provide an alternative method to masking techniques for H-defect engineering and in-plane patterning of the band gap energy. This work was supported by the Royal Society and by the University of Nottingham, and the COST Action MP0805.

Item Type: Article
Additional Information: This is the final published version of the article (version of record). It first appeared online via AIP Publishing at https://doi.org/10.1063/1.3610464 - please refer to any applicable terms of use of the publisher.
Subjects: Q Science > QC Physics
Divisions: Faculty of Natural Sciences > School of Chemical and Physical Sciences
Depositing User: Symplectic
Date Deposited: 14 Nov 2019 15:58
Last Modified: 14 Nov 2019 16:03
URI: http://eprints.keele.ac.uk/id/eprint/7203

Actions (login required)

View Item View Item