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The synthesis and characterization of Cu2ZnSnS4 thin films from melt reactions using xanthate precursors

Savjani, N; Zhong, XL; Wang, Y; Missous, M; Al-Shakban, M; Matthews, P; O'Brien, P

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Authors

N Savjani

XL Zhong

Y Wang

M Missous

M Al-Shakban

P O'Brien



Abstract

Kesterite, Cu2ZnSnS4 (CZTS), is a promising absorber layer for use in photovoltaic cells. We report the use of copper, zinc and tin xanthates in melt reactions to produce Cu2ZnSnS4 (CZTS) thin films. The phase of the as-produced CZTS is dependent on decomposition temperature. X-ray diffraction patterns and Raman spectra show that films annealed between 375 and 475 °C are tetragonal, while at temperatures <375 °C hexagonal material was obtained. The electrical parameters of the CZTS films have also been determined. The conduction of all films was p-type, while the other parameters differ for the hexagonal and tetragonal materials: resistivity (27.1 vs 1.23 O cm), carrier concentration (2.65 × 10+15 vs 4.55 × 10+17 cm-3) and mobility (87.1 vs 11.1 cm2 V-1 s-1). The Hall coefficients were 2.36 × 103 versus 13.7 cm3 C-1.

Acceptance Date Jul 6, 2017
Publication Date Jul 20, 2017
Publicly Available Date Mar 29, 2024
Journal Journal of Materials Science
Print ISSN 0022-2461
Publisher Springer Verlag
Pages 12761 - 12771
DOI https://doi.org/10.1007/s10853-017-1367-0
Publisher URL https://link.springer.com/article/10.1007%2Fs10853-017-1367-0

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