Dr Nilanthy Balakrishnan n.balakrishnan@keele.ac.uk
Quantum confinement and photoresponsivity ofß-In2Se3 nanosheets grown by physical vapour transport
Balakrishnan, N; Staddon, CR; Smith, EF; Stec, J; Gay, D; Mudd, GW; Makarovsky, O; Kudrynskyi, ZR; Kovalyuk, ZD; Eaves, L; Patanè, A; Beton, PH
Authors
CR Staddon
EF Smith
J Stec
D Gay
GW Mudd
O Makarovsky
ZR Kudrynskyi
ZD Kovalyuk
L Eaves
A Patanè
PH Beton
Abstract
We demonstrate that ß-In2Se3 layers with thickness ranging from 2.8 to 100 nm can be grown on SiO2/Si, mica and graphite using a physical vapour transport method. The ß-In2Se3 layers are chemically stable at room temperature and exhibit a blue-shift of the photoluminescence emission when the layer thickness is reduced, due to strong quantum confinement of carriers by the physical boundaries of the material. The layers are characterised using Raman spectroscopy and x-ray diffraction from which we confirm lattice constants c = 28.31 ± 0.05 Å and a = 3.99 ± 0.02 Å. In addition, these layers show high photoresponsivity of up to ~2 × 103 A W-1 at ? = 633 nm, with rise and decay times of t r = 0.6 ms and t d = 2.5 ms, respectively, confirming the potential of the as-grown layers for high sensitivity photodetectors.
Acceptance Date | Apr 29, 2016 |
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Publication Date | Jun 3, 2016 |
Publicly Available Date | Mar 29, 2024 |
Journal | 2D Materials |
Publisher | IOP Publishing |
Pages | 025030 - 025030 |
DOI | https://doi.org/10.1088/2053-1583/3/2/025030 |
Keywords | indium selenide, quantum confinement, photodetector, III–VI semiconductor, physical vapour deposition |
Publisher URL | https://doi.org/10.1088/2053-1583/3/2/025030 |
Files
Balakrishnan_2016_2D_Mater._3_025030.pdf
(2.5 Mb)
PDF
Publisher Licence URL
https://creativecommons.org/licenses/by/4.0/
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