Chemical Vapor Deposition of Tin Sulfide from Diorganotin(IV) Dixanthates

Al-Shakban, M; Matthews, p; Lewis, EA; O'Brien, P; Haigh, SJ; Lewis, DJ; Raftery, J; Vitorica-Yrezabal, I

doi:10.1007/s10853-018-2968-y

Chemical Vapor Deposition of Tin Sulfide from Diorganotin(IV) Dixanthates

Al-Shakban, M; Matthews, p; Lewis, EA; O'Brien, P; Haigh, SJ; Lewis, DJ; Raftery, J; Vitorica-Yrezabal, I

Authors

M Al-Shakban

Peter Matthews p.d.matthews@keele.ac.uk

EA Lewis

P O'Brien

SJ Haigh

DJ Lewis

J Raftery

I Vitorica-Yrezabal

Abstract

We report the synthesis and single-crystal X-ray characterization of diphenyltin bis(2-methoxyethylxanthate) and diphenyltin bis(iso-butylxanthate). These xanthates have been used as a single-source precursor to deposit tin chalcogenide thin films by aerosol-assisted chemical vapor deposition. Grazing incidence X-ray diffraction and scanning transmission electron microscope imaging coupled with elemental mapping show that films deposited from diphenyltin bis(iso-butylxanthate) contain orthorhombic SnS, while films deposited from diphenyltin bis(2-methoxyethylxanthate) between 400 and 575 °C form a SnS/SnO2 nanocomposite. In synthesizing the thin films, we have also demonstrated an ability to control the band gap of the materials based on composition and deposition temperature.

Acceptance Date	Sep 24, 2018
Publication Date	Sep 28, 2018
Journal	Journal of Materials Science
Print ISSN	0022-2461
Publisher	Springer Verlag
DOI	https://doi.org/10.1007/s10853-018-2968-y
Publisher URL	http://doi.org/10.1007/s10853-018-2968-y