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Band-gap profiling by laser writing of hydrogen-containing III-N-Vs

Martelli, F; Patanè, A; Rubini, S; Balakrishnan, N; Pettinari, G; Makarovsky, O; Turyanska, L; Fay, MW; De Luca, M; Polimeni, A; Capizzi, M

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Authors

F Martelli

A Patanè

S Rubini

G Pettinari

O Makarovsky

L Turyanska

MW Fay

M De Luca

A Polimeni

M Capizzi



Abstract

We show that the dissociation of the N-H complex in hydrogenated III-N-Vs can be laser activated at temperatures that are significantly smaller than those (>200?°C) required for thermal dissociation due to a resonant photon absorption by the N-H complex. This phenomenon provides a mechanism for profiling the band-gap energy in the growth plane of the III-N-Vs with submicron spatial resolution and high energy accuracy; the profiles are erasable and the alloys can be rehydrogenated making any nanoscale in-plane band-gap profile rewritable.

Acceptance Date Oct 10, 2012
Publication Date Oct 10, 2012
Journal Physical Review B
Print ISSN 1098-0121
Publisher American Physical Society
DOI https://doi.org/10.1103/PhysRevB.86.155307
Publisher URL https://doi.org/10.1103/PhysRevB.86.155307

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