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Laser writing of the electronic activity of N- and H-atoms in GaAs

Martelli, F; Rubini, S; Balakrishnan, N; Patanè, A; Makarovsky, O; Polimeni, A; Capizzi, M

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Authors

F Martelli

S Rubini

A Patanè

O Makarovsky

A Polimeni

M Capizzi



Abstract

We use a focussed laser beam to control the electronic activity of N- and H-atoms in a dilute nitride Ga(AsN)/GaAs quantum well. Our approach yields submicron resolution in the spatial manipulation of the electronic properties and can provide an alternative method to masking techniques for H-defect engineering and in-plane patterning of the band gap energy. This work was supported by the Royal Society and by the University of Nottingham, and the COST Action MP0805.

Acceptance Date Jun 1, 2011
Publication Date Jul 11, 2011
Publicly Available Date Mar 28, 2024
Journal Applied Physics Letters
Print ISSN 0003-6951
Publisher AIP Publishing
Pages 021105 - 021105
DOI https://doi.org/10.1063/1.3610464
Publisher URL https://doi.org/10.1063/1.3610464

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