Balakrishnan, N, Staddon, CR, Smith, EF, Stec, J, Gay, D, Mudd, GW, Makarovsky, O, Kudrynskyi, ZR, Kovalyuk, ZD, Eaves, L, Patanè, A and Beton, PH (2016) Quantum confinement and photoresponsivity ofβ-In2Se3 nanosheets grown by physical vapour transport. 2D Materials, 3 (2). 025030 - 025030. ISSN 2053-1583

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We demonstrate that β-In2Se3 layers with thickness ranging from 2.8 to 100 nm can be grown on SiO2/Si, mica and graphite using a physical vapour transport method. The β-In2Se3 layers are chemically stable at room temperature and exhibit a blue-shift of the photoluminescence emission when the layer thickness is reduced, due to strong quantum confinement of carriers by the physical boundaries of the material. The layers are characterised using Raman spectroscopy and x-ray diffraction from which we confirm lattice constants c = 28.31 ± 0.05 Å and a = 3.99 ± 0.02 Å. In addition, these layers show high photoresponsivity of up to ~2 × 103 A W−1 at λ = 633 nm, with rise and decay times of τ r = 0.6 ms and τ d = 2.5 ms, respectively, confirming the potential of the as-grown layers for high sensitivity photodetectors.

Item Type: Article
Additional Information: This is the final published version of the article (version of record). It first appeared online via IOP Publishing at - please refer to any applicable terms of use of the publisher.
Uncontrolled Keywords: indium selenide, quantum confinement, photodetector, III–VI semiconductor, physical vapour deposition
Subjects: Q Science > QC Physics
Divisions: Faculty of Natural Sciences > School of Chemical and Physical Sciences
Depositing User: Symplectic
Date Deposited: 14 Nov 2019 16:27
Last Modified: 31 Mar 2021 08:37

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