Keele Research Repository

We report on the fabrication of a micrometer-size movable light emitting area in a GaAs/AlAs quantum well resonant tunneling p-i-n diode. The spatial position of the micrometer-size light emitting area shifts linearly with increasing applied bias, up to 30 μm for a bias increment of 0.2 V. Also, the simultaneous resonant tunneling injection of both electrons and holes into the quantum well states is achieved at specific positions of the diode, thus resulting in a tenfold increase of the electroluminescence intensity.

This work was supported by the EU (under Grant Agreement No. PIEF-GA-2010-272612), The Royal Society (RG110416), The University of Nottingham, and the Italian MIUR (under the FIRB project DeLIGHTeD, Prot. RBFR12RS1W). We thank the EPSRC National Center for III–V Technologies (K. Kennedy and R. Airey) for device processing and A. Nasir (The University of Nottingham) for assistance during sample preparation.