Pettinari, G, Balakrishnan, N, Makarovsky, O, Campion, RP, Polimeni, A, Capizzi, M and Patanè, A (2013) A micrometer-size movable light emitting area in a resonant tunneling light emitting diode. Applied Physics Letters, 103 (24). 241105 - 241105. ISSN 0003-6951

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We report on the fabrication of a micrometer-size movable light emitting area in a GaAs/AlAs quantum well resonant tunneling p-i-n diode. The spatial position of the micrometer-size light emitting area shifts linearly with increasing applied bias, up to 30 μm for a bias increment of 0.2 V. Also, the simultaneous resonant tunneling injection of both electrons and holes into the quantum well states is achieved at specific positions of the diode, thus resulting in a tenfold increase of the electroluminescence intensity.

This work was supported by the EU (under Grant Agreement No. PIEF-GA-2010-272612), The Royal Society (RG110416), The University of Nottingham, and the Italian MIUR (under the FIRB project DeLIGHTeD, Prot. RBFR12RS1W). We thank the EPSRC National Center for III–V Technologies (K. Kennedy and R. Airey) for device processing and A. Nasir (The University of Nottingham) for assistance during sample preparation.

Item Type: Article
Additional Information: This is the final published version of the article (version of record). It first appeared online via AIP Publishing at - please refer to any applicable terms of use of the publisher.
Subjects: Q Science > QC Physics
Divisions: Faculty of Natural Sciences > School of Chemical and Physical Sciences
Depositing User: Symplectic
Date Deposited: 14 Nov 2019 15:59
Last Modified: 14 Nov 2019 16:10

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