Balakrishnan, N, Pettinari, G, Makarovsky, O, Turyanska, L, Fay, MW, De Luca, M, Polimeni, A, Capizzi, M, Martelli, F, Rubini, S and Patanè, A (2012) Band-gap profiling by laser writing of hydrogen-containing III-N-Vs. Physical Review B, 86 (15). ISSN 1098-0121

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We show that the dissociation of the N-H complex in hydrogenated III-N-Vs can be laser activated at temperatures that are significantly smaller than those (>200 °C) required for thermal dissociation due to a resonant photon absorption by the N-H complex. This phenomenon provides a mechanism for profiling the band-gap energy in the growth plane of the III-N-Vs with submicron spatial resolution and high energy accuracy; the profiles are erasable and the alloys can be rehydrogenated making any nanoscale in-plane band-gap profile rewritable.

Item Type: Article
Additional Information: This is the final published version of the article (version of record). It first appeared online via American Physical Society at - please refer to any applicable terms of use of the publisher.
Subjects: Q Science > QC Physics
Divisions: Faculty of Natural Sciences > School of Chemical and Physical Sciences
Depositing User: Symplectic
Date Deposited: 14 Nov 2019 16:11
Last Modified: 14 Nov 2019 16:14

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