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Balakrishnan, N, Pettinari, G, Makarovsky, O, Turyanska, L, Fay, MW, De Luca, M, Polimeni, A, Capizzi, M, Martelli, F, Rubini, S and Patanè, A (2012) Band-gap profiling by laser writing of hydrogen-containing III-N-Vs. Physical Review B, 86 (15). ISSN 1098-0121
Band-gap profiling by laser writing of hydrogen-containing III-N-Vs.pdf - Published Version
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Abstract
We show that the dissociation of the N-H complex in hydrogenated III-N-Vs can be laser activated at temperatures that are significantly smaller than those (>200 °C) required for thermal dissociation due to a resonant photon absorption by the N-H complex. This phenomenon provides a mechanism for profiling the band-gap energy in the growth plane of the III-N-Vs with submicron spatial resolution and high energy accuracy; the profiles are erasable and the alloys can be rehydrogenated making any nanoscale in-plane band-gap profile rewritable.
Item Type: | Article |
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Additional Information: | This is the final published version of the article (version of record). It first appeared online via American Physical Society at https://doi.org/10.1103/PhysRevB.86.155307 - please refer to any applicable terms of use of the publisher. |
Subjects: | Q Science > QC Physics |
Divisions: | Faculty of Natural Sciences > School of Chemical and Physical Sciences |
Depositing User: | Symplectic |
Date Deposited: | 14 Nov 2019 16:11 |
Last Modified: | 14 Nov 2019 16:14 |
URI: | https://eprints.keele.ac.uk/id/eprint/7202 |