Balakrishnan, N, Steer, E, Smith, E, Kudrynsky, Z, Kovalyuk, Z, Eaves, L, Patanè, A and Beton, P (2018) Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe. 2D Materials. ISSN 2053-1583

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We demonstrate that γ-InSe and the α, β and γ phases of In2Se3 can be grown epitaxially on ε-GaSe substrates using a physical vapour transport method. By exploiting the temperature gradient within the tube furnace, we can grow selectively different phases of InxSey depending on the position of the substrate within the furnace. The uniform cleaved surface of ε-GaSe enables the epitaxial growth of the InxSey layers, which are aligned over large areas. The InxSey epilayers are characterised using Raman, photoluminescence, x-ray photoelectron and electron dispersive x-ray spectroscopies. Each InxSey phase and stoichiometry exhibits distinct optical and vibrational properties, providing a tuneable photoluminescence emission range from 1.3 eV to ~2 eV suitable for exploitation in electronics and optoelectronics.

Item Type: Article
Additional Information: Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Uncontrolled Keywords: indium selenide, III–VI van der Waals layered crystals, 2D materials, physical vapour transport
Subjects: Q Science > Q Science (General)
Divisions: Faculty of Natural Sciences > School of Chemical and Physical Sciences
Depositing User: Symplectic
Date Deposited: 27 Aug 2020 10:46
Last Modified: 31 Mar 2021 13:13

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