Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures

Xie, Shihong; Dey, Anubhab; Yan, Wenjing; Kudrynskyi, Z; Balakrishnan, Nilanthy; Kovalyuk, ZD; Makarovsky, Oleg; Castanon, E; Kolosov, Oleg; Wang, Kaiyou; Patane, A

doi:10.1088/2053-1583/ac1ada

Ferroelectric semiconductor junctions based on graphene/In2Se3/graphene van der Waals heterostructures

Xie, Shihong; Dey, Anubhab; Yan, Wenjing; Kudrynskyi, Z; Balakrishnan, Nilanthy; Kovalyuk, ZD; Makarovsky, Oleg; Castanon, E; Kolosov, Oleg; Wang, Kaiyou; Patane, A

Authors

Shihong Xie

Anubhab Dey

Wenjing Yan

Z Kudrynskyi

Dr Nilanthy Balakrishnan n.balakrishnan@keele.ac.uk

ZD Kovalyuk

Oleg Makarovsky

E Castanon

Oleg Kolosov

Kaiyou Wang

A Patane

Abstract

The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waals (vdW) two-dimensional materials with potential for nano-ferroelectrics. Here, we report on ferroelectric semiconductor junctions (FSJs) in which the ferroelectric vdW semiconductor a-In2Se3 is embedded between two single-layer graphene electrodes. In these two-terminal devices, the ferroelectric polarization of the nanometre-thick In2Se3 layer modulates the transmission of electrons across the graphene/In2Se3 interface, leading to memristive effects that are controlled by applied voltages and/or by light. The underlying mechanisms of conduction are examined over a range of temperatures and under light excitation revealing thermionic injection, tunnelling and trap-assisted transport. These findings are relevant to future developments of FSJs whose geometry is well suited to miniaturization and low-power electronics, offering opportunities to expand functionalities of ferroelectrics by design of the vdW heterostructure.

Journal Article Type	Article
Acceptance Date	Aug 4, 2021
Online Publication Date	Aug 20, 2021
Publication Date	Oct 1, 2021
Journal	2D Materials
Publisher	IOP Publishing
Peer Reviewed	Peer Reviewed
Volume	8
Issue	4
Pages	1-9
DOI	https://doi.org/10.1088/2053-1583/ac1ada
Keywords	ferroelectrics; semiconductors; two-dimensional materials; electron transport; photoresponse
Publisher URL	https://iopscience.iop.org/article/10.1088/2053-1583/ac1ada